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Power Transistors
2SC5739
Silicon NPN epitaxial planar type
Unit: mm
Features
* High-speed switching (tstg: storage time/tf: fall time is short) * Low collector-emitter saturation voltage VCE(sat) * Superior forward current transfer ratio hFE linearity * TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed
13.70.2 4.20.2 Solder Dip
15.00.5
Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters
9.90.3
3.00.5
4.60.2 2.90.2
3.20.1
1.40.2 1.60.2 0.80.1
2.60.1
0.550.15
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 60 60 6 3 6 20 2.0 150 -55 to +150 C C Unit V V V A A W
2.540.30 5.080.50 1 2 3
1: Base 2: Collector 3: Emitter TO-220D-A1 Package
Internal Connection
C B E
Note) *: Non-repetitive peak collector current
Electrical Characteristics TC = 25C 3C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO ICEO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = 10 mA, IB = 0 VCB = 60 V, IE = 0 VCE = 60 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.1 A, f = 10 MHz IC = 1 A, Resistance loaded IB1 = 0.1 A, IB2 = - 0.1 A VCC = 50 V 180 0.2 0.55 0.10 0.3 0.70 0.15 120 40 0.5 V MHz s s s Min 60 100 100 1 320 Typ Max Unit V A A mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 120 to 250 P 160 to 320
SJD00288AED
Publication date: February 2003
1
2SC5739
IC VBE
VCE = 4 V
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 8
10 000
hFE IC
VCE = 4 V
7 6
Collector current IC (A)
5 4 3 2 1 0
Ta = 100C 25C
1
Forward current transfer ratio hFE
Ta = 100C 25C
1 000
Ta = 100C -25C
0.1
-25C
100
25C
-25C
0.01
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01
0.1
1
10
1 0.01
0.1
1
10
Base-emitter voltage VBE (V)
Collector current IC (A)
Collector current IC (A)
Area of safe operation
100 Non repetitive pulse TC = 25C
1 000
Rth t
Ta = 25C
Thermal resistance Rth (C/W)
Collector current IC (A)
10 I CP IC
t = 1 ms t=1s t = 10 ms
100 (1)
1
10
(2)
0.1
1
0.01
1
10
100
1 000
0.1 0.001
(1) Without heat sink (2) With 100 x 100 x 2 mm Al 0.01 0.1 1 10 100 1 000
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00288AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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